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11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2011), 17-19 January 2011, Phoenix, USA

This 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF2011) continues to be the only conference devoted to Si-based devices, passives, integrated circuits, and applications for high frequency systems(http://www.silicon-rf.org/).


Over three days, papers and sessions will highlight the significant technological advances of this dynamic field, as well as provide a unique forum for the presentation of new ideas and candid exchange on emerging challenges and opportunities. Invited tutorial talks from international experts will be presented in key topical areas. A student paper competition will be held, and prizes will be given at the conference banquet.


Technical papers are solicited in the following areas, but all papers related to Si-based RF systems are welcome:

-Materials: Epitaxy, strain engineering, characterization, stability issues, smart materials.
-Devices: Physics, optimization, and scaling limits of SiGe HBTs, RF-CMOS, SOI CMOS, strained-SiCMOS, SiGe MOSFETs, Si-based MODFETs, mm-wave diodes, RF CNT devices.
-IC Technologies: Novel device structures, HBT and CMOS integration issues, heterogeneous integration, interconnects, fabrication on high-resistivity Si and SOI, packaging issues, IC on polymer/ paper.
-Circuits: Microwave and mm-wave building blocks, integrated transceivers, high-speed DAC and ADC, analog/mixed-signal circuit blocks, RFICs, RF sensors, RF power meters, RF biosensors.
-Passives: Inductors, capacitors, thin film resistors, transmission lines, integrated antennas, transformers.
-MEMS/NEMS: RF MEMS, micro-machining for improved passives, integration with Si-based
circuits.
-Reliability Issues: Yield and reliability concerns in high-frequency Si-based circuits, signal isolation issues, interference, substrate noise, RF impedance mismatch robustness, cooling architecture.
-Measurement and Modeling: Multi-physics modeling, electromagnetic simulation of complex RF systems, robust measurement and de-embedding techniques, methods of built-in-self-test and built-inself-
calibration, correlation of high-frequency parameters with easy-to-measure DC/AC parameters.
-Applications: system-on-a-chip (SoC) and system-in-a-package (SiP) solutions for mm-wave subsystems
and systems, integration of Si-based photonic elements with electronic circuits, UWB
architecture, RFI, wireless sensor architectures, health monitoring, medical diagnostics.
-Nanoscale microwave: Nano (CNT, nanowire, dots, graphene), quantum, Multi Gigabit optical, and THz materials, devices and circuits.

Submission Deadline: July 30, 2010

PAPER SUBMISSION GUIDELINES
Authors must submit a two to four page manuscript in pdf format online and must clearly indicate how the work advances the-state-of-the-art. Papers should include: 1) the names of all authors and their affiliations, 2) whether this is a student paper, and 3) the mailing address, phone number, fax number, and email address of the corresponding author. Papers submitted to SiRF 2011 must NOT be submitted to the Radio Wireless Symposium.

MEETING DETAILS
This meeting will be held during the Radio and Wireless Week in Phoenix, AZ with joint sessions between SiRF 2011 and the Radio and Wireless Symposium (RWS). Our popular single session format allows active interactions between all participants. A refereed IEEE conference proceeding will be published, and a best student paper competition will be held.

Tentative Submission Deadline : 30 July 2010

Homepage: http://www.silicon-rf.org/sirf2011/?p=start

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Posted on 2010-07-13 12:09:52, Report Update

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